View 2SK2415_185219.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2415, 2SK2415-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS (in millimeters)
+ 0.2 1.5 - 0.1
6.5 0.2
2.3 0.2 0.5 0.1
FEATURES
1.6 0.2
5.0 0.2 4
RDS(on)1 = 0.10 MAX. (@ VGS = 10 V, ID = 4.0 A) RDS(on)2 = 0.15 MAX. (@ VGS = 4 V, ID = 4.0 A)
123
* Low Ciss
Ciss = 570 pF TYP.
1.3 MAX.
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
2.3 2.3
7.0 MAX. 5.5 0.2 13.7 MIN.
* Low On-Resistance
0.6 0.1
0.6 0.1
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
TO-251 (MP-3)
6.5 0.2
5.0 0.2
+ 0.2 1.5 - 0.1
0.75
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 C) Total Power Dissipation (Ta = 25 C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 60 20 8.0 32 20 1.0 150 8.0 6.4 V
0.8 4.3 MAX.
2.3 0.2 0.5 0.1
A A W W C A mJ
12.0
MIN.
1.3 MAX.
0.9
MAX.
0.8
MAX.
2.3 2.3
0.8
-55 to +150 C
1. 2. 3. 4.
Gate Drain Source Fin (Drain)
TO-252 (MP-3Z)
Drain
** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
Gate Body Diode
Gate Protection Diode Source
The information in this document is subject to change without notice. Document No. D13207EJ1V1DS00 (1st edition) (Previous No. TC-2496) Date Published December 1997 N CP(K) Printed in Japan
(c)
0.5
12
3
5.5 0.2
V
10.0 MAX.
1.0 MIN. 1.5 TYP.
4
1994
2SK2415, 2SK2415-Z
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source On-State Resistance Drain to Source On-State Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 570 290 75 5 60 75 40 21 2.0 6.5 1.0 85 200 1.0 5.0 MIN. TYP. 0.07 0.10 1.6 8.4 10 10 MAX. 0.10 0.15 2.0 UNIT V S TEST CONDITIONS VGS = 10 V, ID = 4.0 A VGS = 4 V, ID = 4.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.0 A VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 4.0 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 8.0 A VDD = 48 V VGS = 10 V IF = 8.0 A, VGS = 0 IF = 8.0 A, VGS = 0 di/dt = 100 A/s
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
D.U.T. RG = 25 PG VGS = 20 0 V 50
L
D.U.T. RL PG. RG RG = 10 VGS
Wave Form
VGS
10 % 0 VGS (on)
90 %
VDD
VDD ID ID
Wave Form
90 % 90 % 10 % 0 td (on) ton tr
IAS ID VDD
BVDSS VDS
VGS 0 t t = 1 s Duty Cycle 1 %
ID
10 % td (off) toff tf
Starting Tch
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50
RL VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2415, 2SK2415-Z
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 24 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
20 40 60 80 100 120 140 160
80
20 16 12 8 4
60
40
20
0
0
20
40
60
80
100 120
140
160
Tc - Case Temperature - C
Tc - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100 ID (pulse)
10 d 0 ite ) 1 s im 0 V L1 m ID (DC) n) = s (o S 10 S Po G RD t V m we s (a rD DC iss ipa tio n Lim ite d
PW
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 40 Pulsed VGS = 10 V VGS = 6 V 24 VGS = 4 V 16
=
10
ID - Drain Current - A
10
1
ID - Drain Current - A
s
32
8
0.1 0.1
TC = 25 C Single Pulse 1 10 100 0 2 4 6 8
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed VDS = 10 V
ID - Drain Current - A
100
10
Ta = - 25 C 25 C 125 C
1
0
1
2
3
4
5
6
7
8
VGS - Gate to Source Voltage - V
3
2SK2415, 2SK2415-Z
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - C/W
1000 Rth(ch-a) = 125 C/W 100
10 Rth(ch-c) = 6.25 C/W 1
0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
IyfsI- Forward Transfer Admittance - S
100 Ta = - 25 C 25 C 75 C 125 C
RDS(on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 140 Pulsed 120 100 80 60 40 20 ID = 4.0 A
10
1
0.1
1 ID - Drain Current - A
10
0
5
10
15
20
25
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESITANCE vs. DRAIN CURRENT
VGS(off) - Gate to Source Cutoff Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 2.0 VDS = 10 V ID = 1 mA 1.5
160 Pulsed 140 120 100 80 VGS = 10 V 60 40 20 0 1 10 ID - Drain Current - A 100 VGS = 4 V
1.0
0.5
0
- 50 - 25 0 25 50 75 100 125 150
Tch - Channel Temperature - C
4
2SK2415, 2SK2415-Z
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 180 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
140 120 100 80 60 40 20 ID = 4.0 A 0 - 50 0 50 100 150 Tch - Channel Temperature - C VGS = 10 V VGS = 4 V
ISD - Diode Forward Current - A
160
10 10 V
1
VGS = 0
0
1.0 VSD - Source to Drain Voltage - V
2.0
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 1 000
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 f = 1 MHz
1 000 Ciss
100
td(off)
Coss 100 Crss
tf 10
tr td(on) VDD = 30 V VGS = 10 V RG = 10
10 1 10 VDS - Drain to Source Voltage - V 100
1.0 0.1 1.0 10 ID - Drain Current - A
100
REVERSE RECOVERY TIME vs. DRAIN CURRENT 100 80
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VDS - Drain to Source Voltage - V
trr - Reverse Recovery time - ns
70 60 50 40 30 20 10 0 10 20 VDS VGS
14 12 10 8 6 4 2 0
10 0.1 1.0
di/dt = 50 A/ s VGS = 0 10
30
40
ID - Drain Current - A
Qg - Gate Charge - nC
5
VGS - Gate to Source Voltage - V
ID = 8.0 A VDD = 48 V
16
2SK2415, 2SK2415-Z
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100
IAS - Single Avalanche Energy - mJ dt - Energy Derating Factor - %
SINGLE AVALANCHE ENERGY DERATING FACTOR 100 80 VDD = 30 V RG = 25 VGS = 20 V 0 IAS 8.0 A
10
IAS = 8.0 A
EAS =6 .4 m
60
J
40
1.0 VDD = 30 V VGS = 20 V 0 0.1 RG = 25 10 100
20
0 1m 10 m 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - C
L - Inductive Load - H
6
2SK2415, 2SK2415-Z
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
7
2SK2415, 2SK2415-Z
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5

▲Up To Search▲

Price & Availability of 2SK2415

	To Download 2SK2415 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .